Pressureless Sintered Silicon Carbide Ceramic Crucible High-Temperature Resistant SiC Crucible for Experimental Use in Scientific Research Institutes (Cylinder, Φ16×16mm/1.5ml)

Silicon carbide crucibles are manufactured using a pressureless sintering process and are available in three shapes: cylinder, rectangle, and arc, with a dimensional tolerance of ±1 mm. Silicon carbide crucibles exhibit excellent high-temperature resistance, capable of withstanding temperatures up to 1650°C in an air environment and reaching a maximum temperature of 2000°C under vacuum conditions. Density ≥ 3.10 g/cm³, porosity 0%, dense structure; hardness (Rockwell hardness 45N) 93, high hardness; Thermal expansion coefficient: 4.0×10⁻⁶/K at 20–1000°C, ensuring good thermal stability and controllable thermal deformation. Free of free silicon, it exhibits high strength, wear resistance, oxidation resistance, excellent thermal conductivity, and superior thermal shock resistance, making it suitable for applications such as high-temperature chemical reactions and semiconductor manufacturing.

• Silicon carbide crucibles are manufactured using a pressureless sintering process and are available in three shapes: cylinder, rectangle, and arc, with a dimensional tolerance of ±1 mm.
• Silicon carbide crucibles exhibit excellent high-temperature resistance, capable of withstanding temperatures up to 1650°C in an air environment and reaching a maximum temperature of 2000°C under vacuum conditions.
• Density ≥ 3.10 g/cm³, porosity 0%, dense structure; hardness (Rockwell hardness 45N) 93, high hardness; Thermal expansion coefficient: 4.0×10⁻⁶/K at 20–1000°C, ensuring good thermal stability and controllable thermal deformation.
• Free of free silicon, it exhibits high strength, wear resistance, oxidation resistance, excellent thermal conductivity, and superior thermal shock resistance, making it suitable for applications such as high-temperature chemical reactions and semiconductor manufacturing.